Systine provides a fundamentally new etching process and etch processing tool set for precision, damage free etching of semiconductor materials to enhance today’s leading edge 45nm production yields and to meet the industry’s 32 nm and sub-32nm roadmap requirements. Systine’s Low Energy Electron Enhance Etching (LE4) technology utilizes a low energy, dc electron discharge and neutral chemical etching species to drive a highly selective etching reaction that has etched precision device features at dimensions of less than 20nm with a surface finish that approaches atomic smoothness. This represents a significant advance over traditional ion enhanced (dry) etching which relies on momentum transfer by rf field accelerated reactive ions to etch device features. While defining the device features, this momentum transfer inflicts unavoidable material damage that degrades semiconductor device yields and performance. Systine’s patented damage-free LE4 technology breakthrough and the Gradina etching tools based on it will play a major role in helping the semiconductor industry meet the processing demands of extending Moore’s Law to the ultimate limits at an atomic scale and to non-traditional device architectures. Systine is positioned to become a leading supplier in the $4 billion etch equipment market in 2011 and beyond..

For more information contact: Samir Anz, Ph.D., Co-Founder
systineinc.com